Team T-Create Expert 16GB (2x8GB) 3200MHz CL16 DDR4 Grey

The Team T-Create Expert 16GB (2x8GB) 3200MHz CL16 DDR4 Grey memory features a tested latency of 16-20-20-40, 1.35V, customised high temperature resistant capacitor, high quality IC, and supports XMP 2.0.

Features

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Expert DDR4 Desktop Memory

• Large capacity, overclocking and stability all in one
• 10-layer board with professional anti-interference
• Customised high-temperature resistant capacitor
• High-efficiency multitasking
• Lifetime warranty let you create without worries
• QVL Compatibility Certification
• Intel XMP2.0
• High-Quality IC
• Aluminium Heat Dissipation Solution

10-Layer PCB Design with Professional Anti-Interference Feature

The Power layer which lets the current smoothly offered to the loading; the GND layer which makes the signals without any interference, and both of them are specially isolated 10 layers of printed circuit boards. The thickened 10-layer PCB has better anti-interference processing ability, allowing creators to produce animations, editing or processing without lagging.

Customised High-Temperature Resistant Capacitor

The customised capacitor inside of the T-CREATE CLASSIC DESKTOP DDR4 OC10L can withstand the high temperature caused by running large files during creation and maintain a stable output voltage.

High-Efficiency Multitasking

Creators can perform multiple operations at the same time, whether it is file transfer or operations with long waiting times, to greatly improve work efficiency and meet the needs of multitasking.

Lifetime Warranty Let You Create without Worries

The T-CREATE CLASSIC DESKTOP DDR4 OC10L offers a worry-free lifetime warranty and free replacement service for all non-human damage, making the process simple and offering you peace of mind.

Caution

• Before purchasing memory products, please refer to the QVL(Qualified Vendor List) compatibility list first of the motherboard.
• The quality of the CPU memory controller (IMC) and the version from the BIOS of motherboard may both potentially affect the operating frequency of the memory.